| CMOSP8C/Standard (TeledyneDALSA) | 0.8-micron 2.7V-5.5V mixed-signal CMOS;
Double poly; Triple metal; Hi-res poly option [10kOhms/sq];
Twin-tub process on N-type or P-type wafers
Average Cycle Time: 27 Weeks |
| CMOSP8G/HighVoltage (TeledyneDALSA) | 0.8-micron 5V mixed-signal; CMOS 40-300V DMOS and PMOS transistors; 5V CMOS isolated from
40-300V CMOS; PNP bipolar and isolated NPN bipolar; Dual gate oxide technology; Hi-res poly option
[5kOhms/sq]; double poly capacitors; triple metal with TiN barrier; P-type epitaxy over p+ substrate
Average Cycle Time: 27 Weeks |
| IMEC SOI | IMEC Standard SiPhotonics |
| Sensonit/ (Micronit) | Sensonit: customized depth microchannels and integrated electrodes on glass substrates
with optional ITO in-channel electrode or back side metal electrode
Average Cycle Time: 12 Weeks |
| UW-MEMS/ (CIRFE) | Two gold layers surface micromaching process on alumina substrate
Turnaround time: TBA |
| NanoSOI | Nanopatterning of metal and silicon using e-beam litho. Process conducted on SOI with optional oxide etch.
Average turnaround time is 9 weeks.
|
| LTCC | LTCC Process includes 6 layers of Du Pont 9K7.
The process contains 7 conductor layers: 6 silver-based layers with solderable top and
bottom layers. There is an extra gold-based layer on the top side for wirebonding.
Design blocks are: 3cm x 3cm, 3cm x 6cm or 6cm x 6cm.
Estimated delivery time is: 2 months |
| FlowJEM | Quick turnaround, cost effective rigid polymer fabrication technology
for microfluidic devices
|
| GaN 150/ (CPFC) | GaN-based HFET technology fabricated on 3-in. silicon carbide wafers of 75 µm thickness.
It features a 0.15 µm long metal gate, two metal layers (1ME and 2ME) for interconnect, Through-Wafer
Vias (TWVs), 50 O/sq nichrome resistors and MIM capacitors of 0.19 fF/µm2.
The process is suitable for 30 V maximum drain voltage bias, and yields power
levels of ~7 W/mm (measured at 8 GHz). |