CMOSP35/Base/OPTO (AMS)
  
Basic process (C35B4C3): 3.3/5V, 4-layer, 2-poly, mixed-signal CMOS;
Opto process (C35B4O1): 3.3/5V similar to the basic process, with high-efficiency photodiode and anti-reflective coating for imaging and optoelectronic detection applications
Average Cycle Time:  16 Weeks
 
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