The process based on Nb/Al-AlOx/Nb trilayer Josephson junctions is optimized for superconducting electronics devices. The process consists of a 7 mask-level process on a 100 mm silicon wafer that comprises the junction definition, in the few m range, as well as two wiring layers of niobium to connect circuit elements, with vias connecting the different vertical layers, created by etching through insulating layers of silicon dioxide (SiO2) formed by chemical vapor deposition. The metallization of the surface layer with either gold, palladium or niobium allows for different wirebonding materials. 
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