GaN 150/ (CPFC)
  
GaN-based HFET technology fabricated on 3-in. silicon carbide wafers of 75 µm thickness.
It features a 0.15 µm long metal gate, two metal layers (1ME and 2ME) for interconnect, Through-Wafer
Vias (TWVs), 50 O/sq nichrome resistors and MIM capacitors of 0.19 fF/µm2.
The process is suitable for 30 V maximum drain voltage bias, and yields power
levels of ~7 W/mm (measured at 8 GHz).
 
Click here to see your activities