GaN 500/ (CPFC)
CPFC GaN MMIC process on SiC.
Two metal layers, 500nm gate length, optimized ohmic contacts, tailored mesa isolation,
optimized Schottky contacts, NiCr resistors, High Q passives, MIM capacitors, Spiral inductors,
through-wafer vias. It is supported by GaN500 v3 ADS kit.
Average cycle time: 5 months.
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