CMOSP8G/HighVoltage (C2MI)
0.8-micron 5V mixed-signal; CMOS 40-300V DMOS and PMOS transistors; 5V CMOS isolated from
40-300V CMOS; PNP bipolar and isolated NPN bipolar; Dual gate oxide technology; Hi-res poly option
[5kOhms/sq]; double poly capacitors; triple metal with TiN barrier; P-type epitaxy over p+ substrate
Average Cycle Time: 27 Weeks
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